JPH0372152B2 - - Google Patents
Info
- Publication number
- JPH0372152B2 JPH0372152B2 JP15424282A JP15424282A JPH0372152B2 JP H0372152 B2 JPH0372152 B2 JP H0372152B2 JP 15424282 A JP15424282 A JP 15424282A JP 15424282 A JP15424282 A JP 15424282A JP H0372152 B2 JPH0372152 B2 JP H0372152B2
- Authority
- JP
- Japan
- Prior art keywords
- evaporation
- concentration
- evaporation material
- surface area
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000001704 evaporation Methods 0.000 claims description 107
- 230000008020 evaporation Effects 0.000 claims description 107
- 239000000463 material Substances 0.000 claims description 51
- 239000000203 mixture Substances 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 3
- 229910001370 Se alloy Inorganic materials 0.000 claims description 2
- 229910052714 tellurium Inorganic materials 0.000 description 9
- 238000005192 partition Methods 0.000 description 8
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 8
- 229910018110 Se—Te Inorganic materials 0.000 description 7
- 108091008695 photoreceptors Proteins 0.000 description 4
- 230000002265 prevention Effects 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 229910001215 Te alloy Inorganic materials 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000011669 selenium Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Photoreceptors In Electrophotography (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15424282A JPS5943876A (ja) | 1982-09-04 | 1982-09-04 | 蒸発源 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15424282A JPS5943876A (ja) | 1982-09-04 | 1982-09-04 | 蒸発源 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5943876A JPS5943876A (ja) | 1984-03-12 |
| JPH0372152B2 true JPH0372152B2 (en]) | 1991-11-15 |
Family
ID=15579939
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15424282A Granted JPS5943876A (ja) | 1982-09-04 | 1982-09-04 | 蒸発源 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5943876A (en]) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2582095B2 (ja) * | 1987-11-16 | 1997-02-19 | 住友電気工業株式会社 | ダイヤモンドヒートシンクの製造法 |
| DE4104415C1 (en]) * | 1991-02-14 | 1992-06-04 | 4P Verpackungen Ronsberg Gmbh, 8951 Ronsberg, De | |
| US7166169B2 (en) | 2005-01-11 | 2007-01-23 | Eastman Kodak Company | Vaporization source with baffle |
-
1982
- 1982-09-04 JP JP15424282A patent/JPS5943876A/ja active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5943876A (ja) | 1984-03-12 |
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